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Bhattacharjee, Shubhadeep and Vatsyayan, Ritwik and Ganapathi, Kolla Lakshmi and Ravindra, Pramod and Mohan, Sangeneni and Bhat, Navakanta (2019) Hole Injection and Rectifying Heterojunction Photodiodes through Vacancy Engineering in MoS2. In: ADVANCED ELECTRONIC MATERIALS, 5 (6).
Sarkar, Suman and Bid, Aveek and Ganapathi, K Lakshmi and Mohan, Sangeneni (2019) Probing defect states in few-layer MoS2 by conductance fluctuation spectroscopy. In: PHYSICAL REVIEW B, 99 (24).
Chandrasekar, Hareesh and Kumar, Sandeep and Ganapathi, Kolla Lakshmi and Prabhu, Shreesha and Bin Dolmanan, Surani and Tripathy, Sudhiranjan and Raghavan, Srinivasan and Bhat, KN and Mohan, Sangeneni and Muralidharan, Rangarajan and Bhat, Navakanta and Nath, Digbijoy N (2018) Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (9). pp. 3711-3718.
Venkataramanababu, Sruthi and Nair, Greshma and Deshpande, Preeti and Jithin, M A and Mohan, Sangeneni and Ghosh, Ambarish (2018) Chiro-plasmonic refractory metamaterial with titanium nitride (TiN) core-shell nanohelices. In: NANOTECHNOLOGY, 29 (25).
Sharma, Amit and Mohan, Sangeneni and Suwas, Satyam (2018) New insights into microstructural evolution of epitaxial Ni-Mn-Ga films on MgO (100) substrate by high-resolution X-ray diffraction and orientation imaging investigations. In: PHILOSOPHICAL MAGAZINE, 98 (10, A). pp. 819-847.
Bhattacharjee, Shubhadeep and Ganapathi, Kolla Lakshmi and Chandrasekar, Hareesh and Paul, Tathagata and Mohan, Sangeneni and Ghosh, Arindam and Raghavan, Srinivasan and Bhat, Navakanta (2017) Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High-Performance Multilayer MoS2 FETs. In: ADVANCED ELECTRONIC MATERIALS, 3 (1).
Bhattacharjee, Shubhadeep and Ganapathi, Kolla Lakshmi and Mohan, Sangeneni and Bhat, Navakanta (2017) A sub-thermionic MoS2 FET with tunable transport. In: APPLIED PHYSICS LETTERS, 111 (16).
Bhattacharjee, Shubhadeep and Ganapathi, Kolla Lakshmi and Mohan, Sangeneni and Bhat, Navakanta (2017) A sub-thermionic MoS2 FET with tunable transport. In: APPLIED PHYSICS LETTERS, 111 (16).
Ganapathi, Kolla Lakshmi and Bhattacharjee, Shubhadeep and Mohan, Sangeneni and Bhat, Navakanta (2016) High-Performance HfO2 Back Gated Multilayer MoS2 Transistors. In: IEEE ELECTRON DEVICE LETTERS, 37 (6). pp. 797-800.
Padmanabhan, Revathy and Mohan, Sangeneni and Morozumi, Yuichiro and Kaushal, Sanjeev and Bhat, Navakanta (2016) Performance and Reliability of TiO2/ZrO2/TiO2 (TZT) and AlO-Doped TZT MIM Capacitors. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (10). pp. 3928-3935.
Sharma, Amit and Mohan, Sangeneni and Suwas, Satyam (2016) Structural transformations in highly oriented seven modulated martensite Ni-Mn-Ga thin films on an Al2O3 (11(2)over-bar0) substrate. In: JOURNAL OF MATERIALS RESEARCH, 31 (19). pp. 3016-3026.
Ganapathi, Kolla Lakshmi and Bhat, Navakanta and Mohan, Sangeneni (2014) Influence of O-2 flow rate on HfO2 gate dielectrics for back-gated graphene transistors. In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 29 (5).
Ganapathi, Kolla Lakshmi and Bhat, Navakanta and Mohan, Sangeneni (2013) Optimization of HfO2 films for high transconductance back gated graphene transistors. In: Applied Physics Letters, 103 (7). 073105_1-073105_5.
