Up a level |
Ding, YM and Misra, D (2016) Dry and Wet Processed Interface Layer in Ge/High-K Devices studied by Deep Level Transient Spectroscopy. In: 7th International Symposium on Dielectrics for Nanosystems - Materials Science, Processing, Reliability and Manufacturing held as part of the 229th Meeting of The Electrochemical-Society, MAY 29-JUN 02, 2016, San Diego, CA, pp. 329-333.
Mukhopadhyay, S and Mitra, S and Ding, YM and Ganapathi, KL and Misra, D and Bhat, N and Tapily, K and Clark, RD and Consiglio, S and Wajda, CS and Leusink, GJ (2016) Effect of Post Plasma Oxidation on Ge Gate Stacks Interface Formation. In: International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 held as a part of the 229th Meeting of The Electrochemical-Society , MAY 29-JUN 02, 2016, San Diego, CA, pp. 303-312.