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Munshi, MA and Mir, MA and Malik, R and Joshi, V and Chaudhuri, RR and Khan, Z and Shrivastava, M (2023) Understanding Temperature Dependence of ESD Reliability in AlGaN/GaN HEMTs. In: UNSPECIFIED.
Mir, MA and Thakare, A and Munshi, MA and Avinash, V and Wani, S and Khan, Z and Chaudhuri, R and Karthik, S and Malik, R and Joshi, V and Shrivastava, M (2024) On the Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs. In: IEEE International Reliability Physics Symposium, IRPS 2024, 14 April 2024through 18 April 2024, Grapevine.
Mir, MA and Joshi, V and Chaudhuri, RR and Munshi, MA and Malik, RR and Shrivastava, M (2023) Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Malik, RR and Joshi, V and Chaudhuri, RR and Mir, MA and Khan, Z and Shaji, AN and Bhattacharya, M and Vitthal, AT and Shrivastava, M (2023) Signatures of Positive Gate Over-Drive Induced Hole Trap Generation and its Impact on p-GaN Gate Stack Instability in AlGaN/GaN HEMTs. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Chaudhuri, RR and Joshi, V and Gupta, A and Joshi, T and Malik, RR and Mir, MA and Gupta, SD and Shrivastava, M (2023) Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Mir, MA and Loan, SA (2022) A Novel High performance D-latch using Gate Engineered Schottky device. In: 5th International Conference on Multimedia, Signal Processing and Communication Technologies, IMPACT 2022, 26 - 27 November 2022, Aligarh.
Mir, MA and Joshi, V and Chaudhuri, RR and Munshi, MA and Malik, RR and Shrivastava, M (2024) Physical Insights Into the Drain Current Injection-Induced Device Instabilities in AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices, 71 (9). pp. 5251-5257.
