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Mandal, M and Bharath Kumar, M and Malingu, G and Roy, SK and Basu, K (2024) Energy-based Method to Estimate the Partial Hard Turn-on Loss of Complementary SiC MOSFET from Experiment. In: UNSPECIFIED, pp. 1114-1119.
Mandal, M and Roy, SK and Basu, K (2024) An Experimental Technique for Detecting False Turn-on of SiC MOSFETs. In: UNSPECIFIED, pp. 2456-2460.
Mazumder, S and Mandal, M and Bharath Kumar, M and Malingu, G and Roy, SK and Basu, K (2024) Measurement of Circuit Parasitics of a 200kW SiC based Stack. In: UNSPECIFIED, pp. 1120-1124.
Mandal, M and Roy, SK and Basu, K (2022) Analytical Switching Transient Model of TO-247-4 Packaged SiC MOSFETs and Comparison with TO-247-3 Devices. In: IEEE Energy Conversion Congress and Exposition (ECCE), 09 - 13 October 2022, Detroit.
Mandal, M and Kishore Roy, S and Basu, K (2022) Comparison of Si SJMOS and SiC MOSFET for Single Phase PFC Application. In: 48th Annual Conference of the IEEE Industrial Electronics Society, IECON 2022, 17 - 20 October 2022, Brussels.
Mandal, M and Roy, SK and Basu, K (2022) Investigation on the impact of External Layout-dependent Gate-Drain Capacitance on the Switching Dynamics of Si SJMOS. In: 10th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2022, 14 - 17 December 2022, Jaipur.
