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Chaudhuri, RR and Joshi, V and Wani, SS and Karthik, SR and Malik, RR and Shrivastava, M (2024) Experimental Insights into the Role of Inter-valley and Defect Transitions of Hot Electrons in Determining Self-heating in AlGaN/GaN HEMTs. In: IEEE International Reliability Physics Symposium (IRPS),2024, 14-18 April 2024, Grapevine.
Mir, MA and Joshi, V and Chaudhuri, RR and Munshi, MA and Malik, RR and Shrivastava, M (2023) Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Raj, H and Joshi, V and Chaudhuri, RR and Malik, RR and Shrivastava, M (2023) Physical Insights into the DC and Transient Reverse Bias Reliability of β-Ga2O3Based Vertical Schottky Barrier Diodes. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Malik, RR and Joshi, V and Chaudhuri, RR and Mir, MA and Khan, Z and Shaji, AN and Bhattacharya, M and Vitthal, AT and Shrivastava, M (2023) Signatures of Positive Gate Over-Drive Induced Hole Trap Generation and its Impact on p-GaN Gate Stack Instability in AlGaN/GaN HEMTs. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Chaudhuri, RR and Joshi, V and Gupta, A and Joshi, T and Malik, RR and Mir, MA and Gupta, SD and Shrivastava, M (2023) Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Malik, RR and Shaji, AN and Jayshree, ; and Khan, Z and Bhattacharya, M and Munshi, MA and Chaudhuri, RR and Joshi, V and Shrivastava, M (2023) Interplay of Surface Passivation and Electric Field in Determining ESD Behaviour of p-GaN Gated AlGaN/GaN HEMTs. In: UNSPECIFIED.
Mir, MA and Joshi, V and Chaudhuri, RR and Munshi, MA and Malik, RR and Shrivastava, M (2024) Physical Insights Into the Drain Current Injection-Induced Device Instabilities in AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices, 71 (9). pp. 5251-5257.
