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Remesh, N and Chandrasekar, H and Venugopalrao, A and Raghavan, S and Rangarajan, M and Nath, DN (2021) Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications. In: Journal of Applied Physics, 130 (7).
Kumar, VK and Rathkanthiwar, S and Rao, A and Ghosh, P and Dhar, S and Chandrasekar, H and Choudhury, T and Shivashankar, SA and Raghavan, S (2021) Role of Surface Processes in Growth of Monolayer MoS2: Implications for Field-Effect Transistors. In: ACS Applied Nano Materials, 4 (7). pp. 6734-6744.
Balasubramanian, K and Chandrasekar, H and Raghavan, S (2020) Carrier Transport in Graphene Field-Effect Transistors on Gated Polar Nitride Substrates. In: Physica Status Solidi (A) Applications and Materials Science, 217 (16).
