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Mir, MA and Thakare, A and Munshi, MA and Avinash, V and Wani, S and Khan, Z and Chaudhuri, R and Karthik, S and Malik, R and Joshi, V and Shrivastava, M (2024) On the Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs. In: IEEE International Reliability Physics Symposium, IRPS 2024, 14 April 2024through 18 April 2024, Grapevine.
