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Reddy, Nallabala Nanda Kumar and Godavarthi, Srinivas and Kumar, Kesarla Mohan and Kummara, Venkata Krishnaiah and Vattikuti, SV Prabhakar and Akkera, Harish Sharma and Bitla, Yugandhar and Jilani, SAK and Manjunath, V (2019) Evaluation of temperature dependent electrical transport parameters in Fe3O4/SiO2/n-Si metal-insulator-semiconductor (MIS) type Schottky barrier heterojunction in a wide temperature range. In: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 30 (9). pp. 8955-8966.
Reddy, Nallabala Nanda Kumar and Godavarthi, Srinivas and Kumar, Kesarla Mohan and Kummara, Venkata Krishnaiah and Vattikuti, SV Prabhakar and Akkera, Harish Sharma and Bitla, Yugandhar and Jilani, SAK and Manjunath, V (2019) Evaluation of temperature dependent electrical transport parameters in Fe3O4/SiO2/n-Si metal-insulator-semiconductor (MIS) type Schottky barrier heterojunction in a wide temperature range. In: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 30 (9). pp. 8955-8966.
Reddy, Nanda Kumar N and Akkera, Harish Sharma and Sekhar, Chandra M and Uthanna, S (2019) Influence of Ta2O5 Interfacial Oxide Layer Thickness on Electronic Parameters of Al/Ta2O5/p-Si/Al Heterostructure. In: SILICON, 11 (1). pp. 159-164.
Akkera, Harish Sharma and Kaur, Davinder (2018) Exchange bias effect in Ni50Mn35In15/BiFeO3 heterostructure thin film. In: MATERIALS LETTERS, 217 . pp. 64-66.
Sekhar, M. Chandra and Reddy, Nanda Kumar and Reddy, Purusottam and Prakash, B Poorna and Akkera, Harish Sharma and Uthanna, S and Park, Si-Hyun (2018) Influence of substrate bias voltage on crystallographic structure, optical and electronic properties of Al/(Ta2O5)(0.85)(TiO2)(0.15)/p-Si MIS Schottky barrier diodes fabricated by dc magnetron sputtering. In: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 76 . pp. 80-86.
Reddy, N Nanda Kumar and Akkera, Harish Sharma and Sekhar, M Chandra and Park, Si-Hyun (2017) Zr-doped SnO2 thin films synthesized by spray pyrolysis technique for barrier layers in solar cells. In: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 123 (12).