Modeling and Experimental Evidence of the Effect of Concentration Gradients on the Surface Processes during CVD Growth of MoS2

Rao, A and Kumar, K and Raghavan, S (2022) Modeling and Experimental Evidence of the Effect of Concentration Gradients on the Surface Processes during CVD Growth of MoS2. In: 5th IEEE International Conference on Emerging Electronics, ICEE 2020, 26 - 28 November 2020, New Delhi.

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Abstract

The effect of concentration gradients on the surface processes during the chemical vapor deposition of 2D materials such as MoSe2 is discussed in this paper. The simulation involves correlating the impact of changes in reactor conditions such as pressure, temperature, and flow rates of carrier gases on the concentration gradients across the boundary layer to the growth surface which determines the control on growth and thus the crystal quality. The observations from the simulations point towards vapor phase reactions dominating at the inlet of the reactor due to a sudden rise in temperatures leading to constant gradients across the reactor. The effect of pressure is significant in reducing the concentration depletion across the reactor chamber, which helps control the partial pressures of precursors over the growth surface. The simulations predict constant gradients to result in similar nucleation densities and growth rates across the length of the reactor irrespective of position. We observe similar findings experimentally, which correlate to the simulations. This result highlights the importance of physicochemical modeling to enable the predictive growth of 2D materials across large areas for device applications.

Item Type:	Conference Paper
Publication:	2020 5th IEEE International Conference on Emerging Electronics, ICEE 2020
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords:	Boundary layers; Carrier concentration; Layered semiconductors; Molybdenum compounds; Quality control; Selenium compounds; Sulfur compounds, Chemical vapour deposition; Concentration- gradients; Constant gradients; Experimental evidence; Growth surfaces; Impact of changes; Model and simulation; Pressure flow; Reactor conditions; Surface process, Chemical vapor deposition
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	27 Jun 2022 09:33
Last Modified:	27 Jun 2022 09:33
URI:	https://eprints.iisc.ac.in/id/eprint/74003

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