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Shallow donor neutralization in CdTe:In by atomic hydrogen

Gurumurthy, Suma and Bhat, HL and Sundersheshu, B and Bagai, RK and Kumar, Vikram (1996) Shallow donor neutralization in CdTe:In by atomic hydrogen. In: Applied Physics Letters, 68 (17). pp. 2424-2426.

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Passivation effects in In doped n-CdTe upon exposure to rf hydrogen plasma are studied by electrical and photoluminescence measurements and were found to be maximum at about 150°C. Depth profiling by capacitance-voltage measurements show passivation of approximately an order of magnitude at 150°C and 50% at 170°C. No visual surface damage is seen. Reverse bias annealing experiments show that atomic hydrogen drifts in a charged state in n-CdTe, with reactivation kinetics of the donors different from the other well studied semiconductors. Manifestation of the donor passivation in photoluminescence is seen by the reduction of the donor bound luminescence.

Item Type: Journal Article
Publication: Applied Physics Letters
Publisher: American Institute of Physics
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 14 Mar 2007
Last Modified: 19 Sep 2010 04:35
URI: http://eprints.iisc.ac.in/id/eprint/9734

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