Properties of zirconia thin films prepared by reactive magnetron sputtering

Hembram, KPSS and Rao, Mohan G (2007) Properties of zirconia thin films prepared by reactive magnetron sputtering. In: Materials Letters, 61 (2). pp. 502-505.

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Abstract

The search for alternative dielectric materials with high dielectric constant, thermodynamic stable on silicon substrate and low direct tunneling current leads to oxide based materials like zirconia. Zirconia thin films were prepared by reactive magnetron sputtering. The capacitance voltage, ac and dc electrical characteristics were investigated and the values like fixed oxide charges were calculated and compared among the samples with and without annealing. Films annealed at $700^oC$ showed a dielectric constant \sim26 with interface trap densities of $1.629\times1012 eV^{-1} cm^{-2}$.

Item Type:	Journal Article
Publication:	Materials Letters
Publisher:	Elsevier
Additional Information:	Copyright of this article belongs to Elsevier
Keywords:	Zirconia; Reactive sputtering; Dielectric constant;
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	13 Mar 2007
Last Modified:	19 Sep 2010 04:34
URI:	http://eprints.iisc.ac.in/id/eprint/9708

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