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Electronic structure of $Y_{2-x}Ca_xBaNiO_5$ from photoemission and inverse photoemission

Maiti, K and Sarma, DD (1998) Electronic structure of $Y_{2-x}Ca_xBaNiO_5$ from photoemission and inverse photoemission. In: Physical Review B, 58 (15). pp. 9746-9751.

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We investigate the electronic structure of a one-dimensional spin-1 system, $Y_2BaNiO_5$ , and hole-doped $Y_{2-x}Ca_xBaNiO_5$ for x = 0.2 and 0.4, employing photoemission and inverse photoemission spectroscopies. $Y_2BaNiO_5$ has a charge excitation gap of about 2.3 eV. Hole doping via Ca substitution in this system introduces new localized states within this gap. The existence of a finite gap (\sim0.6 eV), even in doped compounds with a variable-range-hopping transport, indicates the importance of correlation effects and disorder in determining the electronic structure in this system.

Item Type: Journal Article
Publication: Physical Review B
Publisher: APS
Additional Information: Copyright of this article belongs to The American Physical Society.
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited: 18 Jan 2007
Last Modified: 19 Sep 2010 04:34
URI: http://eprints.iisc.ac.in/id/eprint/9529

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