Enhanced room temperature mobilities and reduced parallel conduction in hydrogen passivated Si/SiGe heterostructures

Raghavan, MNV and Venkataraman, V (1998) Enhanced room temperature mobilities and reduced parallel conduction in hydrogen passivated Si/SiGe heterostructures. In: Semiconductor Science and Technology, 13 (11). pp. 1317-1321.

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Abstract

The effect of hydrogen passivation on the room temperature mobility and density is studied on n-type $Si_{0.62}Ge_{0.38}$/strained Si modulation-doped structures. Room temperature carrier densities reduced by an order of magnitude while a threefold maximum increase in mobility was observed. By using a two-carrier analysis, it was found that, apart from parallel conduction passivation, the hydrogenation process also improves the channel mobility directly. Plasma and electrolytic hydrogenation were carried out on samples with different spacer thicknesses and mobilities. The plasma method of hydrogenation was found to be more effective when compared to the electrolytic technique. A successful removal of incorporated hydrogen and partial recovery of the control sample was shown by annealing the hydrogenated sample in vacuum at $\sim400^0C$.

Item Type:	Journal Article
Publication:	Semiconductor Science and Technology
Publisher:	IOP
Additional Information:	Copyright of this article belongs to IOP.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	11 Jan 2007
Last Modified:	19 Sep 2010 04:34
URI:	http://eprints.iisc.ac.in/id/eprint/9460

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