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Valley Splitting in $Si/Si_{1-x}Ge_x$ Heterostructures

Balasubramanian, S and Venkataraman, V (1996) Valley Splitting in $Si/Si_{1-x}Ge_x$ Heterostructures. In: Solid State Communications, 100 (7). pp. 525-528.

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We show that the alloy disorder potential can be a possible cause for the valley splitting observed in the $Si/Si_{1-x}Ge_x$, heterostructures at high magnetic fields and low electron densities.

Item Type: Journal Article
Publication: Solid State Communications
Publisher: Elsevier
Additional Information: Copyright of this article belongs to Elsevier.
Keywords: Semiconductors;Heterojunctions;Electronic states (localized)
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 24 Jan 2007
Last Modified: 19 Sep 2010 04:34
URI: http://eprints.iisc.ac.in/id/eprint/9412

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