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Low-voltage varistors based on zinc antimony spinel $Zn_7Sb_2O_{12}$

Ezhilvalavan, S and Kutty, TRN (1996) Low-voltage varistors based on zinc antimony spinel $Zn_7Sb_2O_{12}$. In: Applied Physics Letters, 68 (19). pp. 2693-2695.

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It is possible to prepare low-voltage varistors from the zinc antimony spinel $Zn_7Sb_2O_{12}$ with breakdown voltages in the range of 3–20 V and nonlinearity coefficient \alpha = 7–15. The varistor property is due to the formation of high ohmic potential barriers at the grain boundary regions on low-ohmic n-type grain interiors of the polycrystalline samples. The method of preparation of the spinel, synthesized by coprecipitation followed by annealing under restricted partial pressures of oxygen, controls the mixed valence states for antimony, namely, $Sb^{3+}$ and $Sb^{5+}$. This is critical in attaining high nonlinearity and lower breakdown voltages.

Item Type: Journal Article
Publication: Applied Physics Letters
Publisher: American Institute of Physics
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 12 Jan 2007
Last Modified: 19 Sep 2010 04:33
URI: http://eprints.iisc.ac.in/id/eprint/9297

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