Influence of arsenic concentration on the surface morphology and photoluminescence of LPE grown A1GaAsSb/GaSb with high aluminium content

Dutta, PS and Bhat, HL and Kumar, Vikram and Sochinskii, NV and Dieguez, E (1996) Influence of arsenic concentration on the surface morphology and photoluminescence of LPE grown A1GaAsSb/GaSb with high aluminium content. In: Journal of Crystal Growth, 160 (1-2). pp. 177-180.

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Abstract

High quality layers of $Al_{0.82}Ga_{0.18}AS_ySb_1-y$ have been grown on GaSb substrates by the liquid phase epitaxial (LPE)technique. The effect of arsenic incorporation at various growth temperatures on the surface morphology, lattice mismatch and photoluminescence has been studied. The quality of the epilayers has been found to depend strongly on the pre-growth melt dissolution sequence and improves with increase in growth temperature. Perfectly lattice matched epilayers with excellent optical properties could be grown at 650°C.

Item Type:	Journal Article
Publication:	Journal of Crystal Growth
Publisher:	Elsevier
Additional Information:	Copyright of this article belongs to Elsevier.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	15 Dec 2006
Last Modified:	19 Sep 2010 04:33
URI:	http://eprints.iisc.ac.in/id/eprint/9167

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