Temperature dependence of the c-axis resistivity of high-$T_c$ layered oxides

Kumar, N and Jayannavar, AM (1992) Temperature dependence of the c-axis resistivity of high-$T_c$ layered oxides. In: Physical Review B, 45 (9). pp. 5001-5004.

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Abstract

Electrical transport along the c axis of high-$T_c$ layered oxides is pictured as a coherent interplanar tunneling between neighboring layers blocked by repeated intraplanar incoherent scatterings. This gives the same temperature dependence for the c-axis resistivity as that for the in-plane resistivity. Additional temperature dependence can arise from the temperature-dependent renormalization of the tunneling matrix element by an ohmic coupling to adiabatic phonons because of the large effective electron mass along the c axis. Our calculation is consistent with recent experimental results on single crystals, and makes some definite predictions that can be put to test.

Item Type:	Journal Article
Publication:	Physical Review B
Publisher:	The American Physical Society
Additional Information:	Copyright of this article belongs to American Physical Society.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	26 Mar 2007
Last Modified:	19 Sep 2010 04:32
URI:	http://eprints.iisc.ac.in/id/eprint/8917

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