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Influence of substrate temperature on the properties of oxygen-ion-assisted deposited $CeO_2$ films

Al-Robaee, Mansour S and Rao, Narasimha K and Mohan, S (1992) Influence of substrate temperature on the properties of oxygen-ion-assisted deposited $CeO_2$ films. In: Journal of Applied Physics, 71 (5). pp. 2380-2386.

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Substrate temperature and ion bombardment during deposition have been observed to modify significantly the optical and structural properties of dielectric thin films. Single-layer films of $CeO_2$ have been deposited by electron beam evaporation with simultaneous oxygenion bombardment using a Kaufman broad beam ion source and maintaining the Substrates at elevated temperature. A systematic study has been made on the influence of (a) substrate temperature in the range ambient to $300\hspace{2} ^oC$, (b) ion energy in the range 300-700 eV, and (c) ion current density 100-220 $\mu A/cm^2$ on optical properties such as refractive index, extinction coefficient, inhomogeneity, packing density, and structural properties.The refractive index increased with in increase in substrate temperature: ion energy up to 600 eV and ion current density. Homogeneous, absorption free and high index (2.48) films have been obtained at 600 eV, 220 $\mu A/cm^2$ and at substrate temperature of $300\hspace{2}^oC$. The packing density of the films was observed to be unity for the same deposition conditions. Substrate temperature with simultaneous ion bombardment modified the structure of the films from highly ordered to fine grain structure.

Item Type: Journal Article
Publication: Journal of Applied Physics
Publisher: American Institute Of Physics
Additional Information: The copyright of this article belongs to American Institute Of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 11 Oct 2006
Last Modified: 19 Sep 2010 04:32
URI: http://eprints.iisc.ac.in/id/eprint/8841

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