Sub-1 V Threshold Switching in Microwave-Assisted Solvothermal Nickel Ferrite Films and Its Application for Steep Switching MoS2-Phase FETs

Sanjay, S and Arackal, S and Paruthi, A and Bhat, N (2024) Sub-1 V Threshold Switching in Microwave-Assisted Solvothermal Nickel Ferrite Films and Its Application for Steep Switching MoS2-Phase FETs. In: ACS Applied Materials and Interfaces .

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Abstract

Resistive switching elements have introduced a paradigm shift in emerging computation, offering energy- and space-efficient logic operations. A single-resistive threshold switch can enable applications that require tens of standard CMOS transistors. They can also be used to design hybrid-phase-FETs with a steep subthreshold slope. We report a back-end-of-line (BEOL)-compatible integration of nickel ferrite (NF) films by a microwave-assisted solvothermal (MAS) process offering a very low energy barrier (W0 = 194 m eV) to electrochemical metallization of Ag without any doping. The Ag-contacted NF films display volatile threshold switching with sub-1 V electroforming and threshold voltages of 0.8 and 0.16 V, respectively. Electroforming is achieved at electric fields as low as 107 kV/cm, among the lowest reported for spinel ferrites. The NF film is also integrated into the top-gate stack of a MoS2 FET to achieve a steep switching phase FET with a minimum subthreshold slope of 8.5 mV/dec, surpassing the Boltzmann limit. Electrical measurements and cross-sectional high-resolution transmission electron microscopy (HR-TEM) are used to investigate the filament formation in these films, providing crucial insights to enhance the device performance further. The results place the MAS process as a potential option for BEOL dielectric integration and offer pathways to sustainable, inexpensive, and low-power electronic devices for CMOS logic applications. © 2024 American Chemical Society.

Item Type:	Journal Article
Publication:	ACS Applied Materials and Interfaces
Publisher:	American Chemical Society
Additional Information:	The copyright for this article belongs to American Chemical Society
Keywords:	Acoustoelectric effects; CMOS integrated circuits; Crystalline silicon cells; Iron compounds; Metallizing; Molybdenum compounds; Nickel compounds; Silver compounds; Surface discharges; Threshold voltage; Titanium compounds; Zinc compounds, Boltzmann; Boltzmann limit; Ferrite films; Microwave synthesis; Microwave-assisted; MoS 2; Nickel ferrite; Steep switch; Threshold switches; Threshold switching, Electroforming
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	17 Dec 2024 05:11
Last Modified:	17 Dec 2024 05:11
URI:	http://eprints.iisc.ac.in/id/eprint/87145

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