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Dielectric properties of c-axis oriented $Zn_{1-x}Mg_xO$ thin films grown by multimagnetron sputtering

Dhananjay, * and Krupanidhi, SB (2006) Dielectric properties of c-axis oriented $Zn_{1-x}Mg_xO$ thin films grown by multimagnetron sputtering. In: Applied Physics Letters., 89 (8). 082905-082905.

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$Zn_{1-x}Mg_xO$ (x=0.3) thin films have been fabricated on $Pt/TiO_2 /SiO_2 /Si$ substrates using multimagnetron sputtering technique. The films with wurtzite structure showed a (002) preferred orientation. Ferroelectricity in $Zn_{1-x}Mg_xO$ films was established from the temperature dependent dielectric constant and the polarization hysteresis loop. The temperature dependent study of dielectric constant at different frequencies exhibited a dielectric anomaly at 110 °C. The resistivity versus temperature characteristics showed an anomalous increase in the vicinity of the dielectric transition temperature. The $Zn_{1-x}Mg_xO$ thin films exhibit well-defined polarization hysteresis loop, with a remanent polarization of $0.2\mu C/cm^2$ and coercive field of 8 kV/cm at room temperature.

Item Type: Journal Article
Publication: Applied Physics Letters.
Publisher: American Institute of Physics.
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Division of Chemical Sciences > Materials Research Centre
Date Deposited: 17 Oct 2006
Last Modified: 19 Sep 2010 04:31
URI: http://eprints.iisc.ac.in/id/eprint/8691

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