A Detailed Experimental Switching Transient Performance Comparison of Normally-off GaN HEMTs

Mandal, M and Kumar, MB and Malingu, G and Roy, SK and Basu, K (2024) A Detailed Experimental Switching Transient Performance Comparison of Normally-off GaN HEMTs. In: 2024 IEEE International Communications Energy Conference, INTELEC 2024, 4 August 2024through 7 August 2024, Bengaluru.

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Abstract

GaN HEMTs offer a viable replacement for silicon counterparts due to their superior switching and conduction loss performances. Commercially available normally-off high-voltage (600 - 650V) GaN HEMTs can be broadly divided into (a) Cascode GaN, (b) e-GaN, and (c) GaN GIT. Due to differences in device characteristics and gate driving requirements, the switching dynamics of these GaN HEMTs can vary significantly. This paper focuses on experimental investigations comparing the switching behavior of these normally-off GaN HEMTs. High voltage GaN HEMTs (600 - 650V) with a current rating of about 30A are considered for comparison. Double pulse tests are conducted, and the switching transients are obtained for a wide range of operating conditions. The key switching transient-related parameters, such as switching losses, transition times, (di / dt), (dv / dt), etc., are also compared. The results offer valuable insights for the optimal selection of GaN HEMTs in various power electronics applications. © 2024 IEEE.

Item Type:	Conference Paper
Publication:	INTELEC, International Telecommunications Energy Conference (Proceedings)
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to the publishers.
Keywords:	Cascode amplifiers; Electromagnetic transients; High electron mobility transistors; III-V semiconductors; Power HEMT; Single electron transistors; Transient analysis; Zero voltage switching, (di/dt); (dv/dt); Cascode; Comparison; Double pulse; Double pulse test; GaN HEMTs; GIT; Normally off; Pulse test; Switching loss; Switching transient; Turn offs; Turn-on, Gallium nitride
Department/Centre:	Division of Electrical Sciences > Electrical Engineering
Date Deposited:	16 Nov 2024 13:55
Last Modified:	16 Nov 2024 13:55
URI:	http://eprints.iisc.ac.in/id/eprint/86720

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