Ultra-Low Power Stress-Optic Phase-Shifters in 400 nm Silicon Nitride Platform Using Thin Film Sputtered-PZT

Yumnam, D and Venkatachalam, P and Kallega, R and Kumar, V and Selvaraja, SK (2024) Ultra-Low Power Stress-Optic Phase-Shifters in 400 nm Silicon Nitride Platform Using Thin Film Sputtered-PZT. In: 16th Pacific Rim Conference on Lasers and Electro-Optics, CLEO-PR 2024, 4 August 2024 through 9 August 2024, Incheon.

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Abstract

We present an ultra-low power tunable silicon nitride-based MZI using stress-optic effect induced by thin film PZT of thickness 450 nm with a power consumption in nW level and tunable coefficient of 4 pm/V. © 2024 IEEE.

Item Type:	Conference Paper
Publication:	16th Pacific Rim Conference on Lasers and Electro-Optics, CLEO-PR 2024
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	III-V semiconductors; Low power electronics; Phase shifters, Phase-shifters; Power; PZT; Stress-optic effect; Thin film-sputtered; Thin films-sputtered; Thin-films; Tunables; Ultra-low power, Silicon nitride
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	09 Nov 2024 21:13
Last Modified:	09 Nov 2024 21:13
URI:	http://eprints.iisc.ac.in/id/eprint/86708

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