Optimization of photocurrent and surface wettability of new As10Bi30Se30Te30 thin films through annealing at different temperatures for optoelectronic applications

Dandasena, B and Das, S and Alagarasan, D and Ganesan, R and Naik, R (2024) Optimization of photocurrent and surface wettability of new As10Bi30Se30Te30 thin films through annealing at different temperatures for optoelectronic applications. In: Materials Chemistry and Physics, 328 .

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Abstract

Group V-VI-based metal-doped double chalcogenides are essential in thermoelectric and suitable optoelectronic devices. The present investigation is based on optimising various optical, structural, and electrical behaviours of quaternary As10Bi30Se30Te30 films through thermal annealing at different temperature scales. The structural study by X-ray diffraction (XRD) exhibited the presence of various Bi2Se3, Bi2SeTe2, and Bi2Te3 phases in the annealed films. The crystallinity gradually enhanced after the annealing process. The microstructural modifications in the material have been confirmed through the Raman spectra. The elemental confirmation was verified from the energy dispersive X-ray (EDX) spectra, whereas the cross-sectional scanning electron microscopy (SEM) view showed the annealing-induced modifications in the films. The granular structure in the films is seen from the surface morphology study. The reduction of the energy gap from 1.36 ± 0.002 eV to 1.26 ± 0.001 eV upon annealing induced the increment in refractive index from 3.08 to 3.15. With annealing, the non-linear refractive index varied from 4.341x10�10 esu to 5.218 x10�10 esu. This indicates the narrowing of the bandgap and enhancement in the non-linear optical response of the material after the annealing process. The 3rd-order nonlinear susceptibility is also increased by annealing, thus making it suitable for nonlinear device applications. Annealing-induced surface change in the material enhances its surface wettability and makes it more hydrophilic. The linear enhancement in photocurrent with the voltage is ohmic and makes it suitable for various optoelectronic applications. © 2024 Elsevier B.V.

Item Type:	Journal Article
Publication:	Materials Chemistry and Physics
Publisher:	Elsevier Ltd
Additional Information:	The copyright for this article belongs to the publishers.
Keywords:	Annealing; Bismuth compounds; Crystallinity; Gallium compounds; Hard facing; Layered semiconductors; Optical films, Annealing process; As10bi30se30te30 film; Metal-doped; Optical-; Optimisations; Optoelectronic applications; Photoresponses; Property; Surface wettability; Thin-films, Photocurrents
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	09 Oct 2024 05:43
Last Modified:	09 Oct 2024 05:43
URI:	http://eprints.iisc.ac.in/id/eprint/86319

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