Simulation and deposition of Tungsten oxide (WO3) films using DC sputtering towards UV photodetector for high responsivity

G, Nithya and Naveen Kumar, K and Shaik, H and Reddy, S and Sen, Prosenjit and Guru Prakash, N and Ansari, MA (2024) Simulation and deposition of Tungsten oxide (WO3) films using DC sputtering towards UV photodetector for high responsivity. In: Physica B: Condensed Matter, 695 .

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Abstract

Tungsten trioxide (WO3) detects UV radiation with great sensitivity while disregarding visible light, and it also has excellent electron mobility, allowing for efficient charge transport and fast response times. This work aims to develop a highly sensitive UV photodetector using WO3 material by optimizing the deposition parameter partial oxygen pressure (PaO2) and annealing the samples at various temperatures to determine the best PaO2 and annealing temperature that results in an improvement in the UV photodetector's sensitivity. The material WO3 was coated on glass substrates using DC magnetron sputtering while altering the PaO2 as 6 � 10�2 Pa, 4 � 10�2 -2 Pa, and 2 � 10�2 Pa, and then each as-deposited sample from varied PaO2 was annealed at temperatures ranging from 100°C to 400°C. When the sample's responses were compared, it was observed that the sample deposited at PaO2 2 � 10�2 Pa and annealed at 400 °C exhibited good photodetection capabilities, as evidenced by several characterization techniques such as SEM, XRD, and IV characterization. The work was subsequently carried out by evaluating the sample deposited at PaO2 2 � 10�2 Pa and annealed at 700 °C, which produced a good result for UV photodetection with the device's responsivity of 1e+4 A/W. © 2024 Elsevier B.V.

Item Type:	Journal Article
Publication:	Physica B: Condensed Matter
Publisher:	Elsevier B.V.
Additional Information:	The copyright for this article belongs to the publishers.
Keywords:	Magnetron sputtering; Oxide films; Photodetectors, And partial pressure of oxygen; Annealing temperatures; DC magnetron sputtering; Magnetron-sputtering; Partial pressure of oxygen; Responsitivity; Responsivity; Tungsten oxide; Tungsten trioxide; UV photodetectors, Annealing
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	11 Oct 2024 06:25
Last Modified:	11 Oct 2024 06:25
URI:	http://eprints.iisc.ac.in/id/eprint/86318

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