Physical Insights Into the Drain Current Injection-Induced Device Instabilities in AlGaN/GaN HEMTs

Mir, MA and Joshi, V and Chaudhuri, RR and Munshi, MA and Malik, RR and Shrivastava, M (2024) Physical Insights Into the Drain Current Injection-Induced Device Instabilities in AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices, 71 (9). pp. 5251-5257.

PDF IEEE_tra_ele_dev_71_9_2024.pdf - Published Version Restricted to Registered users only Download (5MB) | Request a copy

Abstract

Through detailed experiments and well-calibrated computations, this work provides physical insights into the processes affecting the response of an AlGaN/GaN high electron mobility transistor (HEMT) to constant OFF-state drain current injection, a condition often encountered in circuit operation. Experiments reveal a stress time and stress current-dependent unique drain voltage evolution in response to a constant drain current injection. On the fly, dynamic ON-resistance and threshold voltage measurements are used to determine the role of trapping. Furthermore, calibrated computations are used to propose a mechanism involving a complex interplay of the processes of electron trapping in the surface and hole emission and electron trapping in the GaN buffer to explain the time-dependent evolution of drain voltage. Experimental validation of the mechanism is also provided by temperature, passivation thickness, and light exposure-dependent analysis, as well as by experimentation on devices with variations in buffer carbon doping. © 1963-2012 IEEE.

Item Type:	Journal Article
Publication:	IEEE Transactions on Electron Devices
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to publisher.
Keywords:	Aluminum gallium nitride; Buffer circuits; Hard facing; High electron mobility transistors; Junction gate field effect transistors; Silicon nitride, AlGaN/GaN high electron mobility transistor; AlGaN/GaN high electron mobility transistors; Buffer trap; Carbon-doped GaN buffer; Current injections; Drain voltage; Dynamic ON-resistance; Electron trapping; GaN buffer; Surface trap, Gallium nitride
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	17 Sep 2024 11:29
Last Modified:	17 Sep 2024 11:29
URI:	http://eprints.iisc.ac.in/id/eprint/86165

Actions (login required)

View Item