Ezhilvalavan, S and Kutty, TRN (1996) High-Frequency Capacitance Resonance of ZnO-based Varistor Ceramics. In: Applied Physics Letters, 69 (23). pp. 3540-3542.
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Abstract
Capacitance resonance of ZnO varistor ceramics can be shifted from gegahertz to a few megahertz frequency region with increasing amounts of specific secondary phases. The observed resonance is due to the total inductance of the varistor ceramics wherein the grain boundaries are shorted at high frequencies, which arises from the dynamic exchange of charge carriers at the grain interiors and the trap states that are formed at the depletion regions around the grain boundaries. This is applicable to ZnO/ZnO grain boundaries as also to ZnO/secondary phase boundaries. The capacitance-voltage studies show direct correlation between the magnitude of capacitance resonance and the nonlinearity coefficient in current-voltage relations.
Item Type: | Journal Article |
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Publication: | Applied Physics Letters |
Publisher: | American Institute of Physics |
Additional Information: | Copyright of this article belongs to American Institute of Physics. |
Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
Date Deposited: | 20 Nov 2006 |
Last Modified: | 19 Sep 2010 04:31 |
URI: | http://eprints.iisc.ac.in/id/eprint/8560 |
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