Decoupling Current and Voltage Mediated Breakdown Mechanisms in CVD MoS2FETs

Patbhaje, U and Verma, R and Kumar, J and Dar, AB and Shrivastava, M (2024) Decoupling Current and Voltage Mediated Breakdown Mechanisms in CVD MoS2FETs. In: 2024 IEEE International Reliability Physics Symposium, IRPS, 14 April 2024through 18 April 2024, Grapevine.

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Abstract

We report distinct breakdown mechanisms in CVD monolayer MoS2 FET devices for the first time mediated by either voltage or currents in devices. A detailed analysis of the breakdown physics explains the operational effects led shortcomings expected in downscaled devices. Operating short channel TMDs devices would be tricky owing to the dipole moment making it imperative to address the piezoelectric response related drifts in search of reliable performance. The electrical performance evolution was analyzed from turning ON of device till breakdown under stresses and effects on devices are found to be residual which would impair reliable functioning of nm-scale devices. © 2024 IEEE.

Item Type:	Conference Paper
Publication:	IEEE International Reliability Physics Symposium Proceedings
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Layered semiconductors; Molybdenum compounds, 'current; Breakdown; Breakdown mechanism; Currents and voltages; Decoupling voltage; MoS 2; Operational effects; Piezoelectric response; Short channels; TMD, Electric fields
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	13 Aug 2024 11:26
Last Modified:	13 Aug 2024 11:26
URI:	http://eprints.iisc.ac.in/id/eprint/85293

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