Hot Carrier Dynamics and Electrical Breakdown Analysis in 2D Transition Metal Dichalcogenide FETs

Verma, R and Patbhaje, U and Shah, AA and Kumar, J and Chaudhuri, RR and Dar, AB and Shrivastava, M (2024) Hot Carrier Dynamics and Electrical Breakdown Analysis in 2D Transition Metal Dichalcogenide FETs. In: IEEE International Reliability Physics Symposium, IRPS 2024, 14 April 2024 through 18 April 2024, Grapevine.

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Abstract

We reveal a comprehensive physical insight into the high-field electrical breakdown in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs. The electrical and electro-optic properties of 2D TMD FETs are extensively analyzed in the non-destructive breakdown regime. Careful investigations reveal that hot carrier Electroluminescence (EL) observed in the devices operated at the verge of breakdown can have two distinct origins: (i) EL by recombination of majority carriers in the TMDs with the minority carriers injected from electrodes at high bias (ii) Impact ionization EL at the electric field hot-spots. Finally, a unique dynamic trapping/de-trapping process-induced channel field modulation with increasing bias was also observed. © 2024 IEEE.

Item Type:	Conference Paper
Publication:	IEEE International Reliability Physics Symposium Proceedings
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Electroluminescence; Hot carriers; Impact ionization, 2d material; Avalanche breakdown; Breakdown analysis; Carrier dynamics; Dichalcogenides; Electrical breakdown; High-field; Hot-carriers; Transition metal dichalcogenides; Transition metal dichalcogenides (TMD), Transition metals
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	13 Aug 2024 10:54
Last Modified:	13 Aug 2024 10:54
URI:	http://eprints.iisc.ac.in/id/eprint/85287

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