Load-line Dependent Current Filament Dynamics in N anoscale SCR Devices

Goyal, M and Chaturvedi, M and Kumar, R and Vaidya, M and Shrivastava, M (2024) Load-line Dependent Current Filament Dynamics in N anoscale SCR Devices. In: IEEE International Reliability Physics Symposium, IRPS 2024, 14 April 2024through 18 April 2024, Grapevine.

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Abstract

In this paper physics of experimentally observed abnormal behavior in STI bounded Silicon-Controlled-Rectifier (SCR) structures is investigated and explained using basic principles and 3D electrothermal TCAD simulations. The SCR device is found to show pulse to pulse instability in the negative resistance (snapback) region during the lOOns pulse width TLP measurement. The instabilities were independent of SCR geometrical design variations but were dependent on the load line conditions used in the TLP measurement. The physical insights and device physics has been explored using well calibrated 3D process and device TCAD. © 2024 IEEE.

Item Type:	Conference Paper
Publication:	IEEE International Reliability Physics Symposium Proceedings
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Electronic design automation; Thyristors, Current filamentation; Current filaments; Device physics; ESD device physic; ESD protection devices; ESD silicon-controled-rectifier; Load dependence; Load dependence in ESD; Load lines; Snapback in ESD protection device, Electrostatic devices
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	13 Aug 2024 09:57
Last Modified:	13 Aug 2024 09:57
URI:	http://eprints.iisc.ac.in/id/eprint/85284

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