Pradhan, JR and Priyadarsini, SS and Nibgoor, SR and Singh, M and Dasgupta, S (2024) Oxide semiconductor based deep-subthreshold operated read-out electronics for all-printed smart sensor patches. In: Exploration .
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Abstract
The ability to fabricate an entire smart sensor patch with read-out electronics using commercial printing techniques may have a wide range of potential applications. Although solution-processed oxide thin film transistors (TFTs) are capable of providing high mobility electron transport, resulting in large ON-state current and power output, there is hardly any literature report that uses the printed oxide TFTs at the sensor interfaces. Here, printed amorphous indium-gallium-zinc oxide (a-IGZO)-based deep-subthreshold operated TFTs that comprise signal amplifiers and analog-to-digital converters (ADCs) that can successfully digitalize the analog sensor signals up to a frequency range of 1 kHz are reported. In addition, exploiting the high current oxide TFTs, a current drive circuit placed after the ADC unit has been found useful in producing easy-to-detect visual recognition of the sensor signal at a predefined threshold crossover. Notably, the entire smart sensor patch is demonstrated to operate at a low supply voltage of �2 V, thereby ensuring that it can be an on-chip energy source compatible and standalone detection unit. © 2024 The Authors. Exploration published by Henan University and John Wiley & Sons Australia, Ltd.
| Item Type: | Journal Article |
|---|---|
| Publication: | Exploration |
| Publisher: | John Wiley & Sons Inc |
| Additional Information: | The copyright for this article belongs to authors. |
| Department/Centre: | Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy) |
| Date Deposited: | 03 Jun 2024 05:43 |
| Last Modified: | 03 Jun 2024 05:43 |
| URI: | https://eprints.iisc.ac.in/id/eprint/85136 |
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