Multi-point thermal monitoring of silicon wafer under processing utilizing a spectrally shaped supercontinuum source

Dash, S and Goswami, A and Deheri, R and Avasthi, S and Supradeepa, VR (2024) Multi-point thermal monitoring of silicon wafer under processing utilizing a spectrally shaped supercontinuum source. In: UNSPECIFIED.

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Abstract

Optical absorption of silicon at near-infrared (NIR) wavelengths has high temperature dependence which has been utilized for temperature measurement in the current study. We have demonstrated a technique based on transmitted power measurement utilizing a spectrally shaped supercontinuum source, for temperature measurement in a wide range from room temperature to 7000C, with an accuracy of � 10C for the entire range of temperature measurement with an acquisition speed of milliseconds. It has been observed that shorter wavelengths show high absorption at lower temperatures, whereas longer wavelengths show high absorption at elevated temperatures, and vice versa. As a result, for spectra with exponential roll-off t owards l onger w avelengths, t he transmitted power drops sharply as a function of wafer temperature. Hence, higher accuracy of measurement is possible, which is only limited by the intensity noise of the source. The intensity noise of the source is measured as 1.25. The intensity noise limited accuracy is � 10C at 1000C and maximum accuracy of 0.160C is achieved at 7000C. © 2024 SPIE.

Item Type:	Conference Paper
Publication:	Proceedings of SPIE - The International Society for Optical Engineering
Publisher:	SPIE
Additional Information:	The copyright for this article belongs to SPIE.
Keywords:	Infrared devices; Light absorption; Silicon wafers; Temperature distribution, High temperature dependence; Intensity noise; Multi-points; Near-infrared wavelength; Non contact temperatures; Non-contact temperature measurement; Supercontinuum sources; Thermal monitoring; Transmitted power; Wafer processing, Temperature measurement
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	24 May 2024 04:45
Last Modified:	24 May 2024 04:45
URI:	https://eprints.iisc.ac.in/id/eprint/85061

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