Sahoo, J and Vijayakumar, P and Saquib, T and Suganya, M and Ganesamoorthy, S and Muralidharan, R and Nath, DN (2023) Comprehensive Study of Optical Float-Zone Grown Gallium Oxide Schottky Barrier Diode. In: 9th IEEE India International Conference on Power Electronics, IICPE 2023, 28 November 2023 through 30 November 2023.
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Abstract
β-Ga2O3 based lateral Schottky barrier diodes are fabricated using Ni/Au as Schottky contact and Ti/Au as Ohmic contact. The Sn-doped β-Ga2O3 sample is grown by the optical float-zone technique. The effect of trenches, which are used for mesa isolation, on break-down voltage is investigated. The device shows near-ideal characteristics in terms of built-in potential. The parasitic series and shunt resistance are extracted, and their dependency on temperature is established. Comprehensive modeling of temperature-dependent reverse leakage current is demonstrated using the thermionic emission (TE) model, Poole-Frenkel (PF) emission model, and Fowler-Nordheim (FN) tun-neling mechanism. The procedure to extract relevant parameters is explained in terms of bias and temperature dependency. The combined model shows excellent agreement with experimental data over a wide range of bias and temperature. The maximum electric field of 2.3 MV/cm is achieved. © 2023 IEEE.
Item Type: | Conference Paper |
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Publication: | India International Conference on Power Electronics, IICPE |
Publisher: | IEEE Computer Society |
Additional Information: | The copyright for this article belongs to IEEE Computer Society. |
Keywords: | Diodes; Electric fields; Ohmic contacts; Schottky barrier diodes; Thermionic emission, Emission model; Float zones; Lateral schottky barrier diode; Leakage current modeling; Optical float-zone grown β-ga2O3; Optical-; Reverse leakage current; Reverse leakage current modeling; Trench isolation; β -Ga2O3, Gallium compounds |
Department/Centre: | Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering |
Date Deposited: | 03 Sep 2024 11:18 |
Last Modified: | 03 Sep 2024 11:18 |
URI: | http://eprints.iisc.ac.in/id/eprint/84976 |
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