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Improved energy storage properties through multilayer stacking of relaxor ferroelectric and antiferroelectric thin films

Balaraman, AA and Antony, J and Dutta, S (2024) Improved energy storage properties through multilayer stacking of relaxor ferroelectric and antiferroelectric thin films. In: Physica Scripta, 99 (5).

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Official URL: https://doi.org/10.1088/1402-4896/ad32c4

Abstract

Multilayers of relaxor ferroelectric (Pb0.92La0.08Zr0.52Ti0.48O3) and antiferroelectric (Pb0.96La0.04Zr0.98Ti0.02O3) thin films were fabricated on Pt/Ti/SiO2/Si substrates by Chemical Solution Deposition (CSD) method. The properties of the independent relaxor ferroelectric (RFE denoted as R) and antiferroelectric (AFE denoted as A) thin films were compared with their various stack configurations made by alternatively coating the R and A layers in the patterns of R/A, R/A/R, R/A/R/A/R/A, A/R, A/R/A, and A/R/A/R/A/R. The crystallographic studies confirmed the coexistence of both RFE and AFE phases in the multilayer stacks which was further verified by electrical characterizations. The multilayer stack showed improved power density (PD), energy efficiency (η), and reduced dielectric loss compared to individual R and A films. Among all the multilayer configurations, the stack with A/R/A/R/A/R layer exhibited significant improvement in energy efficiency (94) which is higher than the reported results so far on multilayer structures. © 2024 IOP Publishing Ltd.

Item Type: Journal Article
Publication: Physica Scripta
Publisher: Institute of Physics
Additional Information: The copyright for this article belongs to Institute of Physics.
Keywords: Antiferroelectricity; Deposition; Dielectric losses; Energy efficiency; Energy storage; Ferroelectric films; Ferroelectricity; Film preparation; Lanthanum compounds; Lead compounds; Multilayer films; Platinum compounds; Silicon; Silicon compounds; Titanium compounds; Zirconium compounds, Anti ferroelectrics; Antiferroelectric thin films; Energy storage properties; Ferroelectric thin-films; Multilayer stacking; Multilayer stacks; Relaxor ferroelectric; Si substrates; Stack; Thin-films, Multilayers
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 21 May 2024 04:57
Last Modified: 21 May 2024 04:58
URI: https://eprints.iisc.ac.in/id/eprint/84776

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