Texture and phase transition hysteresis in epitaxially integrated VO2 films on TiN/Si(100)

V, RSS and Singh, AR and Vura, S and Parate, SK and Venugopalarao, A and Raghavan, S and Nukala, P and Avasthi, S (2024) Texture and phase transition hysteresis in epitaxially integrated VO2 films on TiN/Si(100). In: Materialia, 34 .

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Abstract

Vanadium oxide (VO2), which exhibits a metal-to-insulator (MIT) transition at 68�C, has been of immense technological interest for many applications such as sensor, electro-optic, and memory devices. In this work, we demonstrate the epitaxial integration of VO2 onto Si(100) via a TiN buffer layer, which is compatible with complementary metal�oxide�semiconductor (CMOS) technology. Our study revealed that the growth of epitaxial VO2 on TiN was mediated by a thin layer of epitaxial TiO2. The orientation relationship between various layers was established to be (011)V O2M � (110)TiO2 � (100)TiN � (100)Si and 100V O2M � 001TiO2 � 011TiN � 011Si. Through pole figures, reciprocal space maps (RSM), and transmission electron microscopy (TEM), we confirmed the presence of tilted rotational domains. We quantified the degree of misorientation in various VO2 films by introducing a relevant parameter, η, determined by analyzing the (011) pole figures. We found a correlation indicating that the thermal hysteresis of the phase transition, determined from in-situ temperature-dependent XRD, decreases with the degree of misorientation. This decrease in misorientation suggests the presence of more geometrically compatible grain boundaries, leading to a decrease in thermal hysteresis. © 2024 Acta Materialia Inc.

Item Type:	Journal Article
Publication:	Materialia
Publisher:	Elsevier B.V.
Additional Information:	The copyright for this article belongs to Elsevier B.V.
Keywords:	Buffer layers; Grain boundaries; High resolution transmission electron microscopy; Hysteresis; Metal insulator transition; Poles; Silicon; Silicon compounds; Tin oxides; Titanium dioxide; Titanium nitride; Vanadium dioxide, Complementary metal-oxide-semiconductor technologies; Electro-optics; Metal-to-insulator transitions; Misorientations; Orientation relationship; Pole figure; Rotational domains; Thermal hysteresis; TiN buffer layers; Transition hysteresis, Textures
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	10 Jul 2024 05:46
Last Modified:	10 Jul 2024 05:46
URI:	http://eprints.iisc.ac.in/id/eprint/84766

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