Sahoo, J and Vijayakumar, P and Saquib, T and Suganya, M and Ganesamoorthy, S and Muralidharan, R and Nath, DN (2024) Study of optical float-zone grown gallium oxide Schottky barrier diode. In: Semiconductor Science and Technology, 39 (5).
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Abstract
β � Ga 2 O 3 based lateral Schottky barrier diodes are fabricated using Ni/Au as Schottky contact and Ti/Au as Ohmic contact. The Sn-doped β � Ga 2 O 3 sample is grown by the optical float-zone technique. The effect of trenches, which are used for mesa isolation, on breakdown voltage is investigated. The device shows near-ideal characteristics in terms of built-in potential. The parasitic series and shunt resistances are extracted, and their dependency on temperature is established. Modeling of temperature-dependent reverse leakage current is demonstrated using the thermionic emission model, Poole-Frenkel emission model, and Fowler-Nordheim tunneling mechanism. The procedure to extract relevant parameters is explained in terms of bias and temperature dependency. The combined model shows excellent agreement with experimental data over a wide range of bias and temperature. The maximum electric field of 2.3 MV cm�1 is achieved. © 2024 IOP Publishing Ltd.
| Item Type: | Journal Article |
|---|---|
| Publication: | Semiconductor Science and Technology |
| Publisher: | Institute of Physics |
| Additional Information: | The copyright for this article belongs to authors. |
| Keywords: | Diodes; Electric fields; Ohmic contacts; Schottky barrier diodes; Thermionic emission, Emission model; Float zones; Lateral schottky barrier diode; Leakage current modeling; Optical float-zone grown β-ga2O3; Optical-; Reverse leakage current; Reverse leakage current modeling; Schottky contacts; Trench isolation, Gallium compounds |
| Department/Centre: | Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering |
| Date Deposited: | 09 Jul 2024 12:18 |
| Last Modified: | 09 Jul 2024 12:18 |
| URI: | http://eprints.iisc.ac.in/id/eprint/84764 |
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