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Carrier transport in LPCVD grown Ge-doped β-Ga2O3/4H-SiC isotype heterojunction

Saquib, T and Akyol, F and Ozden, H and Somaiah, N and Sahoo, J and Muralidharan, R and Nath, DN (2024) Carrier transport in LPCVD grown Ge-doped β-Ga2O3/4H-SiC isotype heterojunction. In: Journal of Applied Physics, 135 (6).

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Official URL: https://doi.org/10.1063/5.0188055


We report on the study of electron transport and band offset across β -Ga 2 O 3 /4H-SiC N-n isotype heterojunction. N-type β -Ga 2 O 3 of thickness 2.7 μ m was grown using low-pressure chemical vapor deposition using germanium (Ge) as the dopant on an n-type 4H-SiC substrate. The grown epilayer having ( � 201 ) orientation was verified through XRD. Temperature-dependent I-V and C-V measurements were performed (50-300 K) to investigate the transport properties across the heterojunction. First, lateral diodes were fabricated on β -Ga 2 O 3 , and from C-V, n-doping was estimated to be 2.3 � 10 17 cm � 3 in the epilayer while the Schottky barrier height was estimated to be 1.75 eV. In top-down I-V sweeps, the reverse current across the heterojunction exhibited marginal dependence on temperature, indicating a possible tunnelling-based transport mechanism, while the forward current exhibited an exponential dependence on both temperature and the applied bias. The band diagram indicated the formation of a two-dimensional electron gas (2DEG) at the hetero-interface, which was indirectly confirmed using C-V measurement and TCAD simulation at low temperatures. From the position of the Fermi level in SiC and band diagram, a conduction band offset of 0.4-0.5 eV was estimated between β -Ga 2 O 3 and 4H-SiC. © 2024 Author(s).

Item Type: Journal Article
Publication: Journal of Applied Physics
Publisher: American Institute of Physics Inc.
Additional Information: The copyright for this article belongs to the Authors.
Keywords: Electron transport properties; Epilayers; Gallium compounds; Heterojunctions; Phase interfaces; Schottky barrier diodes; Two dimensional electron gas, 4H-SiC substrate; Band diagrams; Band-offset; Carriers transport; Electron bands; Electron transport; Germaniums (Ge); Isotype heterojunctions; Low-pressure chemical vapor deposition; XRD, Silicon carbide
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 09 Apr 2024 11:06
Last Modified: 09 Apr 2024 11:06
URI: https://eprints.iisc.ac.in/id/eprint/84684

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