Srivastav, SK and Udupa, A and Watanabe, K and Taniguchi, T and Sen, D and Das, A (2024) Electric-Field-Tunable Edge Transport in Bernal-Stacked Trilayer Graphene. In: Physical Review Letters, 132 (9).
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Abstract
This Letter presents a nonlocal study on the electric-field-tunable edge transport in h-BN-encapsulated dual-gated Bernal-stacked (ABA) trilayer graphene across various displacement fields (D) and temperatures (T). Our measurements revealed that the nonlocal resistance (RNL) surpassed the expected classical Ohmic contribution by a factor of at least 2 orders of magnitude. Through scaling analysis, we found that the nonlocal resistance scales linearly with the local resistance (RL) only when the D exceeds a critical value of �0.2 V/nm. Additionally, we observed that the scaling exponent remains constant at unity for temperatures below the bulk-band gap energy threshold (T<25 K). Further, the value of RNL decreases in a linear fashion as the channel length (L) increases. These experimental findings provide evidence for edge-mediated charge transport in ABA trilayer graphene under the influence of a finite displacement field. Furthermore, our theoretical calculations support these results by demonstrating the emergence of dispersive edge modes within the bulk-band gap energy range when a sufficient displacement field is applied. © 2024 American Physical Society.
| Item Type: | Journal Article |
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| Publication: | Physical Review Letters |
| Publisher: | American Physical Society |
| Additional Information: | The copyright for this article belongs to the Authors. |
| Keywords: | Boron nitride; Electric fields; Energy gap, Band gap energy; Critical value; Displacement field; Edge transport; Nonlocal; Orders of magnitude; Scaling analysis; Scaling exponent; Trilayers; Tunables, Graphene |
| Department/Centre: | Division of Physical & Mathematical Sciences > Centre for High Energy Physics Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 22 Apr 2024 12:33 |
| Last Modified: | 22 Apr 2024 12:33 |
| URI: | https://eprints.iisc.ac.in/id/eprint/84655 |
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