Fabrication and Switching Performance of 8 A�500 V D-Mode GaN MISHEMTs

Baby, R and Roy, SK and Tripathy, S and Muralidharan, R and Basu, K and Raghavan, S and Nath, DN (2023) Fabrication and Switching Performance of 8 A�500 V D-Mode GaN MISHEMTs. In: Physica Status Solidi (A) Applications and Materials Science .

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Abstract

In this work, the design, fabrication, static device testing, and double-pulse switching performance of multi-finger D-mode GaN metal�insulator�semiconductor high-electron-mobility transistors (MISHEMTs) on silicon are discussed. Utilizing an metal-organic chemical vapor deposition-grown GaN high-electron-mobility transistors stack with a superlattice buffer, field-plated devices with a meandering gate geometry and a total gate width of 30 mm are fabricated. Plasma enhanced chemical vapor deposition SiNx is used as the gate dielectric, followed by an optimized bilayer SiNx passivation scheme. Devices with 100 μm gate width have an ON/OFF ratio of �108. They are analyzed for dynamic Ron (normalized Ron = 3 at 100 μs) and time-dependent dielectric breakdown for gate reliability, resulting in a β value of 2.65 from the Weibull plot. Devices with a 30 mm gate width exhibit a maximum ON current of 8 A at zero gate voltage and a three-terminal breakdown of �500 V. The devices are diced, wire-bonded to a printed circuit board, and a double-pulsed test is performed for switching transient characterization under clamped inductive load. The OFF-state and ON-state energy loss are estimated to be Eon = 14 μJ and EOFF = 27 μJ, respectively, when switched at 5 A, 50 V. In this study, the potential of GaN MISHEMTs with bilayer SiNx passivation for low-power D-mode switching applications (5 A, 50 V) is demonstrated. © 2023 Wiley-VCH GmbH.

Item Type:	Journal Article
Publication:	Physica Status Solidi (A) Applications and Materials Science
Publisher:	John Wiley and Sons Inc
Additional Information:	The copyright for this article belongs to John Wiley and Sons Inc.
Keywords:	Electron mobility; Energy dissipation; Fabrication; Gallium nitride; III-V semiconductors; Metal insulator boundaries; Metallorganic chemical vapor deposition; MIS devices; Organic chemicals; Organometallics; Passivation; Plasma CVD; Plasma enhanced chemical vapor deposition; Printed circuit boards; Wide band gap semiconductors, Bi-layer; Device testing; Double pulse; Gate widths; High electron-mobility transistors; Metal-insulator-semiconductors; Multi fingers; Power devices; SiN x passivation; Switching performance, High electron mobility transistors
Department/Centre:	Division of Electrical Sciences > Electrical Engineering
Date Deposited:	04 Mar 2024 09:58
Last Modified:	04 Mar 2024 09:58
URI:	https://eprints.iisc.ac.in/id/eprint/84398

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