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Sputtered PZT-on-SOI Acousto-Optic Modulator Using Remote Buffer crystallisation

C, S and Yumnam, D and Selvaraja, SK (2023) Sputtered PZT-on-SOI Acousto-Optic Modulator Using Remote Buffer crystallisation. In: Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, 26 - 30 June 2023, Munich.

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Official URL: https://doi.org/10.1109/CLEO/EUROPE-EQEC57999.2023...


On-chip Acousto-optic interaction finds applications in photonic modulators, filters, non-reciprocal light transmitters such as isolators, frequency comb generators and quantum processing of information. The acousto-optic (AO) modulation offers the highest modulation extinction than any other light modulation scheme. There have been demonstrations of such interaction on LiNbO3, GaAs, InP, and AlN 1. However, integration of the AO modulator offers a more scalable integration opportunity than any other platform. Lead zirconate titanate (PZT) with a very strong piezoelectric coefficient (typically, d31 = 274 pC/N) and electro-mechanical coefficient (k231 =15%) 2, making it an efficient alternative for acousto-optic interaction. Demonstration of PZT-on-SOI 3 was done using a heterodyne set-up with a sol-gel process. The limitation of this work is the presence of a buffer layer in between PZT and waveguide leads to smaller interaction between SAW and waveguide. In this work, we use Ti/Pt as the remote buffer layer to deposit sputtered PZT, which enables us to fabricate an acousto-optic modulator on SOI. This method increases the interaction between the silicon (Si) waveguide and the SAW wave generated in the PZT layer by getting rid of the intermediate layer on top of the waveguide leading to a refractive index modulation in the Si waveguide as seen in Fig.1(a) schematic. © 2023 IEEE.

Item Type: Conference Paper
Publication: 2023 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2023
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: The copyright for this article belongs to Author.
Keywords: Aluminum nitride; Buffer layers; Gallium arsenide; Indium phosphide; Integrated optics; Lead zirconate titanate; Light modulation; Light modulators; Lithium compounds; Niobium compounds; Optical waveguides; Piezoelectricity; Refractive index; Semiconducting indium phosphide; Silicon; Sol-gel process, Acousto-optic interaction; Acousto-optic modulations; Acousto-optic modulator; Buffer crystallizations; Frequency comb generators; Modulation schemes; On chips; Photonic modulators; PZT; Silicon waveguide, III-V semiconductors
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 04 Mar 2024 09:35
Last Modified: 04 Mar 2024 09:35
URI: https://eprints.iisc.ac.in/id/eprint/84369

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