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Transient Photoconductivity In Si-doped $AI_{0.26}Ga_{0.74}As$

Ghosh, Subhasis and Kumar, Vikram (1992) Transient Photoconductivity In Si-doped $AI_{0.26}Ga_{0.74}As$. In: Solid State Communications, 83 (1). pp. 37-39.

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Transient growth of photoconductivity at temperatures below 30K in Si-doped molecular beam epitaxial $Al_{0.26}Ga_{0.74}As$ has been studied. We have observed a two step phtoionization which can be analyzed and simulated by ionization kinetics represented by a set of coupled differential equations with negative-U initial conditions. Quantitative analysis of ionization kinetics at different temperatures and light intensitiesgives us the desired proof of negatively charged ground state of DX center and existence of a thermodynamically metastable neutral ($DX^0$)state.

Item Type: Journal Article
Publication: Solid State Communications
Publisher: Elsevier
Additional Information: Copyright of this article belongs to Elsevier
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 27 Sep 2006
Last Modified: 19 Sep 2010 04:31
URI: http://eprints.iisc.ac.in/id/eprint/8426

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