Transient Photoconductivity In Si-doped $AI_{0.26}Ga_{0.74}As$

Ghosh, Subhasis and Kumar, Vikram (1992) Transient Photoconductivity In Si-doped $AI_{0.26}Ga_{0.74}As$. In: Solid State Communications, 83 (1). pp. 37-39.

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Abstract

Transient growth of photoconductivity at temperatures below 30K in Si-doped molecular beam epitaxial $Al_{0.26}Ga_{0.74}As$ has been studied. We have observed a two step phtoionization which can be analyzed and simulated by ionization kinetics represented by a set of coupled differential equations with negative-U initial conditions. Quantitative analysis of ionization kinetics at different temperatures and light intensitiesgives us the desired proof of negatively charged ground state of DX center and existence of a thermodynamically metastable neutral ($DX^0$)state.

Item Type:	Journal Article
Publication:	Solid State Communications
Publisher:	Elsevier
Additional Information:	Copyright of this article belongs to Elsevier
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	27 Sep 2006
Last Modified:	19 Sep 2010 04:31
URI:	http://eprints.iisc.ac.in/id/eprint/8426

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