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Development of a SiC MOSFET based Half-Bridge Gate Driver

Shahu, V and Awathare, SA and John, V (2023) Development of a SiC MOSFET based Half-Bridge Gate Driver. In: UNSPECIFIED.

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Official URL: https://doi.org/10.1109/NPEC57805.2023.10384923


Silicon carbide (SiC) device-based converters have better efficiency and power density than the ones based on Silicon (Si) devices. The gate driver design for the SiC switches becomes critical due to the high dv/dt during switching transients. This paper details the design considerations for a dual gate driver for converters utilizing a SiC MOSFET switches. Gate driver attributes are identified based on the design consideration. A hardware prototype is developed based on the design criteria. A low complexity isolated gate driver power supply is built with a compact 3 core 3 winding transformer configuration and a significant reduction in primary to secondary transformer parasitic capacitance is shown in both simulation and from the hardware results. © 2023 IEEE.

Item Type: Conference Paper
Publication: 2023 11th National Power Electronics Conference, NPEC 2023
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords: Capacitance; Design; Power converters; Power MOSFET, Coupling capacitance; Design considerations; Gate drivers; Half-bridge; Isolated gate power supply; Power densities; Power supply; Silicon carbide devices; Silicon carbide MOSFETs; Silicon devices, Silicon carbide
Department/Centre: Division of Electrical Sciences > Electrical Engineering
Date Deposited: 03 Mar 2024 10:31
Last Modified: 03 Mar 2024 10:31
URI: https://eprints.iisc.ac.in/id/eprint/84226

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