Interplay of Surface Passivation and Electric Field in Determining ESD Behaviour of p-GaN Gated AlGaN/GaN HEMTs

Malik, RR and Shaji, AN and Jayshree, ; and Khan, Z and Bhattacharya, M and Munshi, MA and Chaudhuri, RR and Joshi, V and Shrivastava, M (2023) Interplay of Surface Passivation and Electric Field in Determining ESD Behaviour of p-GaN Gated AlGaN/GaN HEMTs. In: UNSPECIFIED.

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Abstract

In this paper, the electric field dependence of ESD robustness of p-GaN gated HEMTs is presented. The tuning parameter Al in the bilayer AlxTi1-xO/SiO2 passivation is used to modulate the distribution of the electric field. The ESD robustness of the devices was observed to increase when the electric field intensity close to the gate edge decreased. Two distinct failure modes associated with field distribution are revealed by leakage behavior, electroluminescence microscopy and SEM imaging of ESD-damaged devices. Devices with higher electric field peaks close to the gate edge show a sudden rise in TLP leakage at snapback and are subject to gate-driven failures. Alternatively, devices with suppressed peak intensity have gradual increase in leakage after snapback, higher ESD robustness, and experience a drain to source driven failure mechanism. © 2023 ESD Association. All rights reserved.

Item Type:	Conference Paper
Publication:	Electrical Overstress/Electrostatic Discharge Symposium Proceedings
Publisher:	ESD Association
Additional Information:	The copyright for this article belongs to authors.
Keywords:	Aluminum gallium nitride; Electric fields; Electrostatic devices; Failure (mechanical); High electron mobility transistors; III-V semiconductors; Passivation, AlGaN/GaN HEMTs; AlGaN/GaN-HEMT; Bi-layer; Electric field dependence; Electric field intensities; ESD robustness; Field distribution; Gate edge; Surface passivation; Tuning parameter, Gallium nitride
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	01 Mar 2024 05:22
Last Modified:	01 Mar 2024 05:22
URI:	https://eprints.iisc.ac.in/id/eprint/83762

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