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Berry curvature dipole and its strain engineering in layered phosphorene

Bandyopadhyay, A and Joseph, NB and Narayan, A (2023) Berry curvature dipole and its strain engineering in layered phosphorene. In: Materials Today Electronics, 6 .

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Official URL: https://doi.org/10.1016/j.mtelec.2023.100076


The emergence of the fascinating non-linear Hall effect intrinsically depends on the non-zero value of the Berry curvature dipole. In this work, we predict that suitable strain engineering in layered van der Waals material phosphorene can give rise to a significantly large Berry curvature dipole. Using symmetry design principles, and a combination of feasible strain and staggered on-site potentials, we show how a substantial Berry curvature dipole may be engineered at the Fermi level. We discover that monolayer phosphorene exhibits the most intense Berry curvature dipole peak near 11.8 strain, which is also a critical point for the topological phase transition in pristine phosphorene. Furthermore, we have shown that the necessary strain value to achieve substantial Berry curvature dipole can be reduced by increasing the number of layers. We have revealed that strain in these van der Waals systems not only alters the magnitude of Berry curvature dipole to a significant value but allows control over its sign. We are hopeful that our predictions will pave way to realize the non-linear Hall effect in such elemental van der Waals systems. © 2023 The Author(s)

Item Type: Journal Article
Publication: Materials Today Electronics
Publisher: Elsevier Ltd
Additional Information: The copyright for this article belongs to Authors.
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited: 28 Feb 2024 05:23
Last Modified: 28 Feb 2024 05:23
URI: https://eprints.iisc.ac.in/id/eprint/83641

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