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Origin of electrical noise near charge neutrality in dual gated graphene device

Mehra, A and Mathew, RJ and Kumar, C (2023) Origin of electrical noise near charge neutrality in dual gated graphene device. In: Applied Physics Letters, 123 (12).

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Official URL: https://doi.org/10.1063/5.0147446


This Letter investigates low frequency 1 / f noise in an hBN encapsulated graphene device in a dual gated geometry. The noise study is performed as a function of top gate carrier density (nTG) at different back gate density (nBG). The noise at low nBG is found to be independent of top gate carrier density. With increasing nBG, noise value increases, and a noise peak is observed near charge inhomogeneity of the device. A further increase in nBG leads to a decrease in noise magnitude. The shape of the noise is found to be closely related to a charge inhomogeneity region of the device. Moreover, the noise and conductivity data near charge neutrality show clear evidence of noise emanating from a combination of charge number and mobility fluctuation. © 2023 Author(s).

Item Type: Journal Article
Publication: Applied Physics Letters
Publisher: American Institute of Physics Inc.
Additional Information: The copyright for this article belongs to the Authors.
Keywords: Carrier concentration; Graphene, Back gates; Charge neutrality; Conductivity data; Electrical noise; Gate density; Inhomogeneities; Low frequency (1/f) noise; Noise data; Noise magnitude; Top gate, Graphene devices
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 15 Dec 2023 11:24
Last Modified: 15 Dec 2023 11:24
URI: https://eprints.iisc.ac.in/id/eprint/83415

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