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Berry curvature induced spontaneous and topological-like Hall effect in magnetic Weyl semimetallic Nd2Ir2O7 (111) thin films

Ghosh, M and Babu, PD and Kumar, PSA (2023) Berry curvature induced spontaneous and topological-like Hall effect in magnetic Weyl semimetallic Nd2Ir2O7 (111) thin films. In: APL Materials, 11 (10).

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Official URL: https://doi.org/10.1063/5.0166455


We report a study of longitudinal resistivity, anisotropic magnetoresistance (MR), and Hall effect on epitaxial Nd2Ir2O7 (111) thin films grown by the solid phase epitaxy technique, in which spin-orbit coupling, electronic correlation, magnetic frustration, and f-d exchange interaction are present. Temperature-dependent longitudinal resistivity (ρxx) data indicate semimetallic charge transport in the low-temperature region. Field-cooled longitudinal resistivity measurements detect negligible domain-wall conductance compared to the polycrystal or single-crystal samples. Angle-dependent MR measurement shows that the magnetic structure of Ir4+ 5d moments can be finely tuned by applying a magnetic field along different crystallographic directions. MR measurements show a field-induced modification of the Nd3+ 4f spin structure from all-in-all-out/all-out-all-in (AIAO/AOAI) (4-in-0-out) to 1-in-3-out for the applied field (H) along the [111] direction, resulting in field-induced plastic deformation of the Ir4+ domain distribution. In contrast, the application of field (H) along the [001] and [011] directions could not modify any domain distribution. A large spontaneous Hall effect (SHE) signal has been observed on Nd2Ir2O7 (111) thin film with AIAO/AOAI antiferromagnetic ordering for the application of field (H) along [001], [ 1 ̄ 1 ̄ 0], and [111] directions. The appearance of a large spontaneous Hall signal for the applied field along [001] and [ 1 ̄ 1 ̄ 0] directions rules out domain switching as the origin of the Hall effect and confirms the presence of the Weyl semimetallic phase in Nd2Ir2O7 (111) thin films. In addition to SHE, a large topological-like Hall signal is also observed, possibly due to the presence of multiple Weyl nodes in the electronic band structure. © 2023 Author(s).

Item Type: Journal Article
Publication: APL Materials
Publisher: American Institute of Physics Inc.
Additional Information: The copyright for this article belongs to the Authors.
Keywords: Antiferromagnetism; Domain walls; Single crystals; Spin Hall effect; Temperature; Topology, Applied field; Domain distribution; Electronic correlation; Hall signal; Longitudinal resistivity; Magnetoresistance measurements; Semimetallics; Solid phase epitaxy; Spin-orbit couplings; Thin-films, Thin films
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 01 Dec 2023 04:07
Last Modified: 01 Dec 2023 04:07
URI: https://eprints.iisc.ac.in/id/eprint/83396

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