Mondal, D and Mahapatra, SR and Derrico, AM and Rai, RK and Paudel, JR and Schlueter, C and Gloskovskii, A and Banerjee, R and Hariki, A and DeGroot, FMF and Sarma, DD and Narayan, A and Nukala, P and Gray, AX and Aetukuri, NPB (2023) Modulation-doping a correlated electron insulator. In: Nature Communications, 14 (1).
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Abstract
Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change. External control of MIT in VO2—especially without inducing structural changes—has been a long-standing challenge. In this work, we design and synthesize modulation-doped VO2-based thin film heterostructures that closely emulate a textbook example of filling control in a correlated electron insulator. Using a combination of charge transport, hard X-ray photoelectron spectroscopy, and structural characterization, we show that the insulating state can be doped to achieve carrier densities greater than 5 × 1021 cm−3 without inducing any measurable structural changes. We find that the MIT temperature (TMIT) continuously decreases with increasing carrier concentration. Remarkably, the insulating state is robust even at doping concentrations as high as ~0.2 e−/vanadium. Finally, our work reveals modulation-doping as a viable method for electronic control of phase transitions in correlated electron oxides with the potential for use in future devices based on electric-field controlled phase transitions. © 2023, Springer Nature Limited.
| Item Type: | Journal Article |
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| Publication: | Nature Communications |
| Publisher: | Nature Research |
| Additional Information: | The copyright for this article belongs to the Authors. |
| Keywords: | electron; insulation; phase transition; temperature effect; textbook |
| Department/Centre: | Division of Chemical Sciences > Solid State & Structural Chemistry Unit Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering |
| Date Deposited: | 12 Dec 2023 04:26 |
| Last Modified: | 12 Dec 2023 04:26 |
| URI: | https://eprints.iisc.ac.in/id/eprint/83352 |
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