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Sputter-deposited PZT on patterned silicon optimization for C-band electro-optic modulation

Suraj, Suraj and Selvaraja, SK (2023) Sputter-deposited PZT on patterned silicon optimization for C-band electro-optic modulation. In: Journal of the Optical Society of America B: Optical Physics, 40 (9). pp. 2321-2329.

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Official URL: https://doi.org/10.1364/JOSAB.497538

Abstract

We report the optimization methodology of sputter-deposited lead zirconium titanate (PZT) on a silicon-oninsulator platformfor photonic applications. A crack-free PZT film is obtained for a 3.6°C/min ramp rate, 550°C annealing temperature, and a surface roughness of ≈2 nm, ≈5 nm, and ≈10 nm for PZT grown on MgO, Pt, andTiO2 buffers, respectively. The coercive field forPZT/MgOand PZT/Pt film is 50 kV/cm and 30 kV/cm, respectively. A waveguide loss of 6.5 dB/mm is obtained for PZT-on-silicon (Si) waveguides. An electro-optic device using an Si microring resonator with optimized PZT/MgO is demonstrated with electro-optic response and coercive field of 14 pm/V and 50 kV/cm, respectively. © 2023 Optica Publishing Group.

Item Type: Journal Article
Publication: Journal of the Optical Society of America B: Optical Physics
Publisher: Optica Publishing Group (formerly OSA)
Additional Information: The copyright for this article belongs to the Optica Publishing Group (formerly OSA).
Keywords: Lead compounds; Platinum compounds; Silicon; Surface roughness; Zirconium compounds, C-bands; Coercive field; Electro-optic modulation; Lead zirconium titanate; Optimisations; Optimization methodology; Patterned silicon; Photonic application; PZT; Silicon on insulator, Magnesia
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 21 Nov 2023 08:45
Last Modified: 21 Nov 2023 08:45
URI: https://eprints.iisc.ac.in/id/eprint/83194

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