Chemical ordering in $Si_xAs_yTe_{100–x–y}$ glasses

Srinivasan, A and Ganesan, R and Madhusoodanan, KN and Gopal, ESR (1992) Chemical ordering in $Si_xAs_yTe_{100–x–y}$ glasses. In: Journal of Materials Science Letters, 11 (24). 1698 -1699.

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Abstract

Tellurium-based glasses find application as electrical switching devices [1]. The formation of a crystalline filament between the electrodes has been observed in memory-type switching glasses after being switched to the conducting state from the high-resist-ance state [2]. This has led to the suggestion that the crystallization of these glasses could possibly be the mechanism behind the irreversible switching action observed in these materials. An understanding of the crystallization kinetics of these glasses is important in this respect. The thermal crystallization behaviour of Si-As-Te has not been well investigated. In this letter differential scanning calorimetry studies on $Si_{l0}As_xTe_{90_ x}$ $(10\leq x \leq50)$ and $Si_{15}AS_x-Te_{85-x}$ $(5\leq x \leq45)$ glasses are reported.

Item Type:	Journal Article
Publication:	Journal of Materials Science Letters
Publisher:	Springer
Additional Information:	Copyright of this article belongs to Springer.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	30 Oct 2006
Last Modified:	19 Sep 2010 04:31
URI:	http://eprints.iisc.ac.in/id/eprint/8309

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