Influence of Cu Doping in Si–Te-Based Chalcogenide Glasses and Thin Films: Electrical Switching, Morphological and Raman Studies

Roy, D and Tanujit, B and Jagannatha, KB and Asokan, S and Das, C (2021) Influence of Cu Doping in Si–Te-Based Chalcogenide Glasses and Thin Films: Electrical Switching, Morphological and Raman Studies. In: IEEE Transactions on Electron Devices, 68 (3). pp. 1196-1201.

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Abstract

To understand the electrical switching behavior of Si15Te85-x Cux (1≤ x ≤10) series, I - V characterization has been performed on bulk as well as amorphous thin films of the as-prepared samples. Both the bulk glasses and amorphous thin films are found to manifest memory-type switching behavior. The threshold voltages of thin-film devices are found to be much lower than the bulk counterparts and hence could find application for phase change memory (PCM). The composition analyses of both have divulged the existence of intermediate phase (IP) in the composition range of 2 ≤ x ≤6. To examine the probability of the given glass for PCM application, Set-Reset studies have been performed on the glasses with a triangular pulse of 6 mA for set operation and rectangular pulse of 12 mA for the reset operation. The study has revealed a continuous repetition of few Set-Reset cycle by the Si-Te-Cu series. Raman studies carried out on the bulk glasses report the occurrence of blue shift over the composition in a regular manner. Further, SEM studies have been carried out on Si-Te-Cu samples to understand the morphological changes that would have occurred during switching. Additionally, thickness dependence of threshold voltage of representative Si15Te80Cu5 and Si15Te76Cu9 glasses has been carried out to reveal the relationship between threshold voltage and thickness.

Item Type:	Journal Article
Publication:	IEEE Transactions on Electron Devices
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Amorphous silicon; Blue shift; Copper; Copper compounds; Copper metallography; Glass; Phase change memory; Semiconductor doping; Silicon; Silicon compounds; Switching; Thin film devices; Threshold voltage, Amorphous thin films; Composition analysis; Electrical switching; Morphological changes; Phase change memory (pcm); Switching behaviors; Te-based chalcogenide glass; Thickness dependence, Thin films
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	30 Nov 2023 04:18
Last Modified:	30 Nov 2023 04:18
URI:	https://eprints.iisc.ac.in/id/eprint/82996

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